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MTB030P06KH8-0-T6-G Datasheet(PDF) 6 Page - Cystech Electonics Corp. |
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MTB030P06KH8-0-T6-G Datasheet(HTML) 6 Page - Cystech Electonics Corp. |
6 / 10 page CYStech Electronics Corp. Spec. No. : C104H8 Issued Date : 2016.04.29 Revised Date : Page No. : 6/10 MTB030P06KH8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 10000 0 5 10 15 20 25 30 -VDS, Drain-Source Voltage(V) C oss Ciss Crss Normalized Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) ID=-250μA ID=-1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 -ID, Drain Current(A) VDS=-10V Pulsed TA=25°C Gate Charge Characteristics 0 2 4 6 8 10 0 4 8 1216 20 2428 32 Qg, Total Gate Charge(nC) VDS=-48V ID=-6A VDS=-30V VDS=-15V Maximum Safe Operating Area 0.1 1 10 100 1000 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100 μs TC=25°C, Tj=175°C, VGS=-10V RθJC=2°C/W, Single Pulse Maximum Drain Current vs Case Temperature 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175 200 TC, Case Temperature(°C) VGS=-10V, RθJC=2°C/W |
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