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MTB080P06N3-0-T1-G Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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MTB080P06N3-0-T1-G Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 9 page CYStech Electronics Corp. Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 1/ 9 MTB080P06N3 CYStek Product Specification P-Channel Enhancement Mode MOSFET BVDSS -60V MTB080P06N3 -2.5A ID@VGS=-10V, TA=25°C VGS=-10V, ID=-2A 80mΩ RDSON(TYP) VGS=-4.5V, ID=-1.7A 109mΩ Features •Advanced trench process technology •High density cell design for ultra low on resistance •Pb-free lead plating and halogen-free package Equivalent Circuit Outline Ordering Information Device Package Shipping MTB080P06N3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / tape & reel MTB080P06N3 SOT-23 D G:Gate S G S:Source D:Drain Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name |
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