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4N25 Datasheet(PDF) 2 Page - CT Micro International Corporation |
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4N25 Datasheet(HTML) 2 Page - CT Micro International Corporation |
2 / 14 page CT Micro Rev 2 Proprietary & Confidential Page 2 Apr, 2016 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 H11A1, H11A2, H11A3, H11A4, H11A5 DC Input 6-Pin Phototransistor Optocoupler Absolute Maximum Rating at 25oC Symbol Parameters Ratings Units Notes VISO Isolation voltage 5000 VRMS TOPR Operating temperature -55 ~ +110 oC TSTG Storage temperature -55 ~ +150 oC TSOL Soldering temperature 260 oC Emitter IF Forward current 60 mA IF(TRANS) Peak transient current (≤1µs P.W,300pps) 1 A VR Reverse voltage 6 V PD Power dissipation 100 mW Detector PD Power dissipation 150 mW BVCEO Collector-Emitter Breakdown Voltage 80 V BVCBO Collector-Base Breakdown Voltage 80 V BVECO Emitter-Collector Breakdown Voltage 7 V BVEBO Emitter-Base Breakdown Voltage 7 V |
Número de pieza similar - 4N25 |
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Descripción similar - 4N25 |
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