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FQP7N60 Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FQP7N60 Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 9 page 5 Rev D, July 2000 Figure 5 compares the waveforms of a conventional MOSFET with the new QFET(FQP7N60) at turn-off without the additional clamped circuit (R5, C6, and D2), and the high conduction diode (D4) for gate discharging (refer to Figure 3). Figure 5: Turn-off Improvement at Rated Conditions (Vin=220VAC, Pout=60W) Note that the switching time of the QFET is faster than that of the conventional MOSFET because of the reduction of gate charge by at least 45 percent. Figure 6 shows the difference in turn-off loss between both MOSFETs without clamped circuits and the conduction diode, D4. The turn-on loss in the crossover losses is very small and can be negligible. The turn-off loss period is due to the finite switching time of the MOSFET which is directly related to the gate charge. Figure 6: Turn-off Loss Improvement Conventional MOSFET QFET Id(0.5A/div) Vds(100V/div) /div Conventional MOSFET QFET /div |
Número de pieza similar - FQP7N60 |
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Descripción similar - FQP7N60 |
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