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SOT23 NPN SILICON PLANAR SWITCHING TRANSISTORS ISSUE 3 FEBRUARY 1996 FEATURES * Fast switching PARTMARKING DETAILS FMMT2222 1BZ FMMT2222A 1P FMMT2222R 2P FMMT2222AR 3P COMPLEMENTARY TYPES FMMT2222 FMMT2907 FMMT2222A FMMT2907A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 30 40 V Emitter-Base Voltage VEBO 56 V Continuous Collector Current IC 600 mA Power Dissipation at Tamb=25°C Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS. MIN. MAX. MIN. MAX. Collector-Base Breakdown Voltage V(BR)CBO 60 75 V IC=10µA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 30 40 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 56V IE=10µA, IC=0 Collector Cut-Off Current ICBO 10 10 10 10 nA µ A nA µ A VCB=50V, IE=0 VCB=60V, IE=0 VCB=50V, IE=0, Tamb=150°C VCB=60V, IE=0, Tamb=150°C Emitter Cut-Off Current IEBO 10 10 nA VEB=3V, IC=0 Collector-Emitter Cut-Off Current ICEX 10 10 nA VCE=60V, VEB(off)=3V Collector-Emitter Saturation Voltage VCE(sat) 0.3 1.0 0.3 1.0 V V IC=150mA, IB=15mA* IC=500mA, IB=50mA* Base-Emitter Saturation Voltage VBE(sat) 0.6 2.0 2.6 0.6 1.2 2.0 V V IC=150mA, IB=15mA* IC=500mA, IB=50mA* Static Forward Current Transfer Ratio hFE 35 50 75 35 100 50 30 300 35 50 75 35 100 50 40 300 IC=0.1mA, VCE=10V* IC=1mA, VCE=10V IC=10mA, VCE=10V* IC=10mA, VCE=10V, Tamb=-55°C IC=150mA, VCE=10V* IC=150mA, VCE=1V* IC=500mA, VCE=10V* *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device FMMT2222 FMMT2222A ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS. MIN. MAX. MIN. MAX. Transition Frequency fT 250 300 MHz IC=20mA, VCE=20V f=100MHz Output Capacitance Cobo 88 pF VCB=10V, IE=0, f=140KHz Input Capacitance Cibo 30 25 pF VEB=0.5V, IC=0 f=140KHz Delay Time td 10 10 ns VCC=30V, VBE(off)=0.5V IC=150mA, IB1=15mA (See Delay Test Circuit) Rise Time tr 25 25 ns Storage Time ts 225 225 ns VCC=30V, IC=150mA IB1= IB2=15mA (See Storage Test Circuit) Fall Time tf 60 60 ns FMMT2222 FMMT2222A Scope: Rin > 100 kΩ Cin < 12 pF Rise Time < 5 ns 0 0.5V 9.9V Generator rise time <2ns Pulse width (t1)<200ns Duty cycle = 2% +30V 200Ω 619Ω DELAY AND RISE TEST CIRCUIT +30V 1N916 -3V 1KΩ Ω Scope: Rin > 100 kΩ Cin < 12 pF Rise Time < 5 ns -13.8 V =500µs =100µs <5ns +16.2 V 0 Duty cycle = 2% STORAGE TIME AND FALL TIME TEST CIRCUIT C B E |
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