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STK11C68-C25 Datasheet(PDF) 4 Page - List of Unclassifed Manufacturers

No. de pieza STK11C68-C25
Descripción Electrónicos  8K x 8 nvSRAM QuantumTrap??CMOS Nonvolatile Static RAM
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Fabricante Electrónico  ETC [List of Unclassifed Manufacturers]
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STK11C68-C25 Datasheet(HTML) 4 Page - List of Unclassifed Manufacturers

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STK11C68
June 1999
4-24
SRAM WRITE CYCLES #1 & #2
(VCC = 5.0V + 10%)
b
Note j:
If W is low when E goes low, the outputs remain in the high-impedance state.
Note k:
E or W must be
≥ V
IH during address transitions.
SRAM WRITE CYCLE #1: W Controlledk
SRAM WRITE CYCLE #2: E Controlledk
NO.
SYMBOLS
PARAMETER
STK11C68-20
STK11C68-25
STK11C68-35
STK11C68-45
UNITS
#1
#2
Alt.
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
12
tAVAV
tAVAV
tWC
Write Cycle Time
20
25
35
45
ns
13
tWLWH
tWLEH
tWP
Write Pulse Width
15
20
25
30
ns
14
tELWH
tELEH
tCW
Chip Enable to End of Write
15
20
25
30
ns
15
tDVWH
tDVEH
tDW
Data Set-up to End of Write
8
10
12
15
ns
16
tWHDX
tEHDX
tDH
Data Hold after End of Write
0
0
0
0
ns
17
tAVWH
tAVEH
tAW
Address Set-up to End of Write
15
20
25
30
ns
18
tAVWL
tAVEL
tAS
Address Set-up to Start of Write
0
0
0
0
ns
19
tWHAX
tEHAX
tWR
Address Hold after End of Write
0
0
0
0
ns
20
tWLQZ
i, j
tWZ
Write Enable to Output Disable
7
10
13
15
ns
21
tWHQX
tOW
Output Active after End of Write
5
5
5
5
ns
PREVIOUS DATA
DATA OUT
E
ADDRESS
12
tAVAV
W
16
tWHDX
DATA IN
19
tWHAX
13
tWLWH
18
tAVWL
17
tAVWH
DATA VALID
20
tWLQZ
15
tDVWH
HIGH IMPEDANCE
21
tWHQX
14
tELWH
DATA OUT
E
ADDRESS
12
tAVAV
W
DATA IN
13
tWLEH
17
tAVEH
DATA VALID
HIGH IMPEDANCE
14
tELEH
18
tAVEL
15
tDVEH
19
tEHAX
16
tEHDX


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