FDS6986S Rev C1 (W)

SyncFET Schottky Body Diode

Characteristics

Fairchild’s SyncFET process embeds a Schottky diode in

parallel with PowerTrench MOSFET. This diode exhibits

similar characteristics to a discrete external Schottky

diode in parallel with a MOSFET. Figure 22 shows the

reverse recovery characteristic of the FDS6986S.

Figure 22. FDS6986S SyncFET body diode

reverse recovery characteristic.

For comparison purposes, Figure 23 shows the reverse

recovery characteristics of the body diode of

an

equivalent size MOSFET produced without SyncFET

(FDS6690A).

Figure 23. Non-SyncFET (FDS6690A) body

diode reverse recovery characteristic.

Schottky barrier diodes exhibit significant leakage at high

temperature and high reverse voltage. This will increase

the power in the device.

0.00001

0.0001

0.001

0.01

0.1

0

10

20

30

125

25

Figure 24. SyncFET body diode reverse

leakage versus drain-source voltage and

temperature.

10nS/DIV

10nS/DIV

0V