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IXYP15N65C3D1M Datasheet(PDF) 2 Page - IXYS Corporation

No. de pieza IXYP15N65C3D1M
Descripción Electrónicos  Optimized for 20-60kHz Switching
Download  6 Pages
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Fabricante Electrónico  IXYS [IXYS Corporation]
Página de inicio  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXYP15N65C3D1M Datasheet(HTML) 2 Page - IXYS Corporation

  IXYP15N65C3D1M Datasheet HTML 1Page - IXYS Corporation IXYP15N65C3D1M Datasheet HTML 2Page - IXYS Corporation IXYP15N65C3D1M Datasheet HTML 3Page - IXYS Corporation IXYP15N65C3D1M Datasheet HTML 4Page - IXYS Corporation IXYP15N65C3D1M Datasheet HTML 5Page - IXYS Corporation IXYP15N65C3D1M Datasheet HTML 6Page - IXYS Corporation  
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYP15N65C3D1M
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Notes:
1. Pulse test, t
 300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher V
CE(clamp), TJ or RG.
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
I
C = 15A, VCE = 10V, Note 1
5.0
8.5
S
C
ies
583
pF
C
oes
V
CE = 25V, VGE = 0V, f = 1MHz
52
pF
C
res
13
pF
Q
g(on)
19
nC
Q
ge
I
C = 15A, VGE = 15V, VCE = 0.5 • VCES
4
nC
Q
gc
10
nC
t
d(on)
15
ns
t
ri
20
ns
E
on
0.27
mJ
t
d(off)
68
ns
t
fi
28
ns
E
off
0.23
0.40
mJ
t
d(on)
15
ns
t
ri
21
ns
E
on
0.53
mJ
t
d(off)
80
ns
t
fi
42
ns
E
off
0.24
mJ
R
thJC
2.63 °C/W
Inductive load, T
J = 25°C
I
C = 15A, VGE = 15V
V
CE = 400V, RG = 20
Note 2
Inductive load, T
J = 150°C
I
C = 15A, VGE = 15V
V
CE = 400V, RG = 20
Note 2
Pins: 1 - Gate
2 - Collector
3 - Emitter
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(T
J = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
V
F
I
F = 10A, VGE = 0V, Note 1
3.0
V
T
J = 125C
1.7
V
I
RM
2.5
A
t
rr
110
ns
t
rr
30
ns
R
thJC
4.0 °C/W
I
F = 12A, VGE = 0V,
-di
F/dt = 100A/μs, VR = 100V, TJ = 125°C
I
F = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
OVERMOLDED TO-220 (IXYP) Outline
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.


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