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SI7858DP Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7858DP Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 3 page SPICE Device Model Si7858DP Vishay Siliconix www.vishay.com Document Number: 71024 2 20-May-02 SPECIFICATIONS (TJ = 25 °C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.91 V On-State Drain Current a ID(on) VDS ≥ 5V, VGS = 4.5V 1265 A VGS = 4.5V, ID = 25A 0.0019 0.0024 Drain-Source On-State Resistance a rDS(on) VGS = 2.5V, ID =20A 0.0031 0.0031 Ω Forward Transconductance a gfs VDS = 6V, ID = 25A 142 130 S Diode Forward Voltage a VSD IS = 2.9A, VGS = 0V 0.76 0.75 V Dynamic b Total Gate Charge Qg 42 40 Gate-Source Charge Qgs 6.7 6.7 Gate-Drain Charge Qgd VDS = 6V, VGS = 4.5V, ID = 25A 9.2 9.2 nC Turn-On Delay Time td(on) 41 40 Rise Time tr 58 40 Turn-Off Delay Time td(off) 66 140 Fall Time tf VDD = 6V, RL = 6 Ω ID ≅ 1A, VGEN = 4.5V, RG = 6Ω 118 70 Source-Drain Reverse Recovery Time trr IF = 2.9A, di/dt = 100 A/ µs 39 50 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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