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IRF133 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza IRF133
Descripción Electrónicos  High Power,High Speed Applications
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF133 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel Mosfet Transistor
IRF133
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0; ID=250µA
60
V
VGS(TH)
Gate Threshold Voltage
VDS= VGS; ID=250µA
2.0
4.0
V
RDS(ON)
Drain-Source On-stage Resistance
VGS=10V; ID=8A
0.25
Ω
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS=60V; VGS=0
250
uA
VSD
Diode Forward Voltage
IS=12A; VGS=0
2.3
V
Ciss
Input Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
800
pF
Crss
Reverse Transfer Capacitance
150
Coss
Output Capacitance
500
tr
Rise Time
RGS=15Ω
ID=8A;
VDD=36V;
RL=15Ω
75
ns
td(on)
Turn-on Delay Time
30
tf
Fall Time
45
td(off)
Turn-off Delay Time
40
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