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IRFP151R Datasheet(PDF) 3 Page - Inchange Semiconductor Company Limited

No. de pieza IRFP151R
Descripción Electrónicos  isc N-Channel MOSFET Transistor
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRFP151R Datasheet(HTML) 3 Page - Inchange Semiconductor Company Limited

  IRFP151R Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRFP151R Datasheet HTML 2Page - Inchange Semiconductor Company Limited IRFP151R Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
3
isc N-Channel MOSFET Transistor
IRFP151R
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
60
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 22A
0.055
Ω
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 60V; VGS= 0
250
μA
VSD
Forward On-Voltage
IS= 40A; VGS= 0
2.5
V
·
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