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IRFP253 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza IRFP253
Descripción Electrónicos  isc N-Channel MOSFET Transistor
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRFP253 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
IRFP253
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
150
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 17A
0.12
Ω
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 150V; VGS= 0
250
μA
VSD
Forward On-Voltage
IS= 33A; VGS= 0
2.0
V
·
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