IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXH30N60C3D1

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

Reverse Diode (FRED)

Symbol Test Conditions

Characteristic Values

(T

Min. Typ.

Max.

V

F

I

2.7

V

T

1.6

V

I

RM

T

4

A

t

rr

T

100

ns

25

ns

R

thJC

0.9 °C/W

I

V

I

F

= 1A, V

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

8

14

S

C

1185

pF

C

oes

V

133

pF

C

res

25

pF

Q

g(on)

37

nC

Q

ge

I

10

nC

Q

gc

15

nC

t

d(on)

23

ns

t

ri

33

ns

E

on

0.50

mJ

t

d(off)

77

125

ns

t

fi

32

ns

E

0.27

0.45

mJ

t

d(on)

22

ns

t

ri

35

ns

E

on

1.13

mJ

t

d(off)

88

ns

t

fi

78

ns

E

off

0.40

mJ

R

thJC

0.55 °C/W

R

thCS

0.21

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

1 - Gate

2,4 - Collector

3 - Emitter

TO-247 (IXXH) Outline