IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXXH110N65C4

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

e

P

TO-247 (IXXH) Outline

1

2

3

Terminals: 1 - Gate

2 - Collector

3 - Emitter

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

24

40

S

C

3690

pF

C

oes

V

240

pF

C

res

140

pF

Q

g(on)

180

nC

Q

ge

I

32

nC

Q

gc

76

nC

t

d(on)

35

ns

t

ri

46

ns

E

on

2.30

mJ

t

d(off)

143

ns

t

fi

30

ns

E

0.60

1.05 mJ

t

d(on)

30

ns

t

ri

32

ns

E

on

2.90

mJ

t

d(off)

130

ns

t

fi

43

ns

E

off

0.77

mJ

R

thJC

0.17 °C/W

R

thCS

0.21

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2