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BTA225B-800B Datasheet(PDF) 1 Page - NXP Semiconductors

No. de pieza BTA225B-800B
Descripción Electrónicos  Three quadrant triacs high commutation
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BTA225B-800B Datasheet(HTML) 1 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Three quadrant triacs
BTA225B series B
high commutation
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
SYMBOL
PARAMETER
MAX.
MAX.
MAX. UNIT
triacs in a plastic envelope suitable for
surface mounting, intended for use in
BTA225B-
500B
600B
800B
circuits where high static and dynamic
V
DRM
Repetitive peak off-state
500
600
800
V
dV/dt and high dI/dt can occur. These
voltages
devices will commutate the full rated
I
T(RMS)
RMS on-state current
25
25
25
A
rms current at the maximum rated
I
TSM
Non-repetitive peak on-state
180
180
180
A
junction temperature, without the aid
current
of a snubber.
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
mb
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V
DRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave;
-
25
A
T
mb ≤ 91 ˚C
I
TSM
Non-repetitive peak
full sine wave;
on-state current
T
j = 25 ˚C prior to surge
t = 20 ms
-
t = 16.7 ms
-
190
A
209
A
I
2tI2t for fusing
t = 10 ms
-
180
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 30 A; IG = 0.2 A;
100
A/
µs
on-state current after
dI
G/dt = 0.2 A/µs
triggering
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
˚C
T
j
Operating junction
-
125
˚C
temperature
13
mb
2
T1
T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
µs.
September 1997
1
Rev 1.100


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