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CDCM1804RTHR Datasheet(PDF) 10 Page - Texas Instruments

No. de pieza CDCM1804RTHR
Descripción Electrónicos  1:3 LVPECL CLOCK BUFFER ADDITIONAL LVCMOS OUTPUT AND PROGRAMMABLE DIVIDER
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Fabricante Electrónico  TI [Texas Instruments]
Página de inicio  http://www.ti.com
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CDCM1804RTHR Datasheet(HTML) 10 Page - Texas Instruments

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PACKAGE THERMAL RESISTANCE
CONTROL INPUT CHARACTERISTICS
BIAS VOLTAGE VBB
CDCM1804
SCAS697E – JULY 2003 – REVISED MAY 2005
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
QFN-24 package thermal resistance(1)
4-layer JEDEC test board (JESD51-7),
RθJA-1
106.6
°C/W
airflow = 0 ft/min
QFN-24 package thermal resistance
4-layer JEDEC test board (JESD51-7) with four
RθJA-2 with thermal vias in PCB
(1)
thermal vias of 22-mil diameter each,
55.4
°C/W
airflow = 0 ft/min
(1)
It is recommended to provide four thermal vias to connect the thermal pad of the package effectively with the PCB and ensure a good
heat sink.
Example:
Calculation of the junction-lead temperature with a 4-layer JEDEC test board using four thermal vias:
TChassis = 85°C (temperature of the chassis)
Peffective = Imax × Vmax = 110 mA × 3.6 V = 396 mW (maximum power consumption inside the package)
θT
Junction = R
θJA-2 × Peffective = 55.45°C/W × 396 mW = 21.96°C
TJunction = θTJunction + TChassis = 21.96°C + 85°C = 107°C (the maximum junction temperature of
Tdie-max = 125°C is not violated)
over recommended operating free-air temperature range
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
tsu
Setup time, S0, S1, S2, and EN terminals before clock IN
25
ns
th
Hold time, S0, S1, S2, and EN terminals after clock IN
0
ns
Time between latching the EN low transition and when all
t(disable)
outputs are disabled (how much time is required until the
10
ns
outputs turn off)
Time between latching the EN low-to-high transition and when
t(enable)
outputs are enabled based on control settings (how much time
1
µs
passes before the outputs carry valid signals)
Rpullup
Internal pullup resistor on S[2:0] and EN inputs
42
60
78
k
VIH(H)
Three-level input high, S0, S1, S2, and EN terminals(1)
0.9 VDD
V
VIM(M)
Three-level input MID, S0, S1, S2, and EN terminals
0.3 VDD
0.7 VDD
V
VIL(L)
Three-level input low, S0, S1, S2, and EN terminals
0.1 VDD
V
IIH
VI = VDD
–5
µA
Input current, S0, S1, S2, and EN terminals
IIL
VI = GND
38
85
µA
(1)
Leaving this terminal floating automatically pulls the logic level high to VDD through an internal pullup resistor of 60 kΩ.
over recommended operating free-air temperature range
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VBB
Output reference voltage
VDD = 3 V–3.6 V, IBB = –0.2 mA
VDD – 1.4
VDD – 1.2
V
10


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