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IXYN120N120C3 Datasheet(PDF) 2 Page - IXYS Corporation

No. de pieza IXYN120N120C3
Descripción Electrónicos  Advance Technical Information
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Fabricante Electrónico  IXYS [IXYS Corporation]
Página de inicio  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXYN120N120C3 Datasheet(HTML) 2 Page - IXYS Corporation

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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN120N120C3
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Notes:
1. Pulse test, t
 300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher V
CE(clamp), TJ or RG.
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
I
C = 60A, VCE = 10V, Note 1
40
68
S
C
ies
9850
pF
C
oes
V
CE = 25V, VGE = 0V, f = 1MHz
580
pF
C
res
218
pF
Q
g(on)
412
nC
Q
ge
I
C = I
C110, VGE = 15V, VCE = 0.5 • VCES
73
nC
Q
gc
180
nC
t
d(on)
35
ns
t
ri
77
ns
E
on
6.75
mJ
t
d(off)
176
ns
t
fi
96
ns
E
off
5.10
mJ
t
d(on)
33
ns
t
ri
72
ns
E
on
10.30
mJ
t
d(off)
226
ns
t
fi
120
ns
E
off
7.20
mJ
R
thJC
0.125 °C/W
R
thCS
0.05
°C/W
Inductive load, T
J = 25°C
I
C = 100A, VGE = 15V
V
CE = 0.5 • VCES, RG = 1
Note 2
Inductive load, T
J = 150°C
I
C = 100A, VGE = 15V
V
CE = 0.5 • VCES, RG = 1
Note 2
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
SOT-227B miniBLOC (IXYN)


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