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IXYN120N120C3 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXYN120N120C3 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 6 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYN120N120C3 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Notes: 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V CE(clamp), TJ or RG. Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. g fs I C = 60A, VCE = 10V, Note 1 40 68 S C ies 9850 pF C oes V CE = 25V, VGE = 0V, f = 1MHz 580 pF C res 218 pF Q g(on) 412 nC Q ge I C = I C110, VGE = 15V, VCE = 0.5 • VCES 73 nC Q gc 180 nC t d(on) 35 ns t ri 77 ns E on 6.75 mJ t d(off) 176 ns t fi 96 ns E off 5.10 mJ t d(on) 33 ns t ri 72 ns E on 10.30 mJ t d(off) 226 ns t fi 120 ns E off 7.20 mJ R thJC 0.125 °C/W R thCS 0.05 °C/W Inductive load, T J = 25°C I C = 100A, VGE = 15V V CE = 0.5 • VCES, RG = 1 Note 2 Inductive load, T J = 150°C I C = 100A, VGE = 15V V CE = 0.5 • VCES, RG = 1 Note 2 ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. SOT-227B miniBLOC (IXYN) |
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