FDD6680S datasheet(2/7 Pages) FAIRCHILD

No. de pieza	FDD6680S

Descripción Electrónicos	30V N-Channel PowerTrench SyncFET?

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FDD6680S Rev D (W)

Electrical Characteristics

T

A

= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Drain-Source Avalanche Ratings (Note 2)

WDSS

Drain-Source Avalanche Energy

Single Pulse, VDD = 15 V, ID=14A

245

mJ

IAR

Drain-Source Avalanche Current

14

A

Off Characteristics

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V, ID = 1 mA

30

V

∆BVDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

ID = 1 mA, Referenced to 25

°C

19

mV/

°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V,

VGS = 0 V

500

µA

IGSSF

Gate–Body Leakage, Forward

VGS = 20 V,

VDS = 0 V

100

nA

IGSSR

Gate–Body Leakage, Reverse

VGS = –20 V,

VDS = 0 V

–100

nA

On Characteristics

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 1 mA

1

2

3

V

∆VGS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient

ID = 1 mA, Referenced to 25

°C

–3.3

mV/

°C

RDS(on)

Static Drain–Source

On–Resistance

VGS = 10 V,

ID = 12.5 A

VGS = 4.5 V,

ID = 10 A

VGS= 10 V, ID = 12.5A, TJ= 125

°C

9.5

13.5

17

11

17

23

m

Ω

ID(on)

On–State Drain Current

VGS = 10 V,

VDS = 5 V

50

A

gFS

Forward Transconductance

VDS = 15 V,

ID = 12.5 A

27

S

Dynamic Characteristics

Ciss

Input Capacitance

2010

pF

Coss

Output Capacitance

526

pF

Crss

Reverse Transfer Capacitance

VDS = 15 V,

V GS = 0 V,

f = 1.0 MHz

186

pF

Switching Characteristics (Note 2)

td(on)

Turn–On Delay Time

10

18

ns

tr

Turn–On Rise Time

10

18

ns

td(off)

Turn–Off Delay Time

34

55

ns

tf

Turn–Off Fall Time

VDS = 15 V,

ID = 1 A,

VGS = 10 V,

RGEN = 6

Ω

14

23

ns

Qg

Total Gate Charge

17

24

nC

Qgs

Gate–Source Charge

6.2

nC

Qgd

Gate–Drain Charge

VDS = 15 V,

ID = 12.5 A,

VGS = 5 V

5.5

nC

Drain–Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain–Source Diode Forward Current

4.4

A

VSD

Drain–Source Diode Forward

Voltage

VGS = 0 V,

IS = 4.4 A

(Note 2)

VGS = 0 V,

IS = 7 A

(Note 2)

0.49

0.56

0.7

V

trr

Diode Reverse Recovery Time

20

nS

Qrr

Diode Reverse Recovery Charge

IF = 12.5A,

diF/dt = 300 A/µs

(Note 3)

19.7

nC

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