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1N4933GL Datasheet(PDF) 1 Page - Diode Semiconductor Korea

No. de pieza 1N4933GL
Descripción Electrónicos  GLASS PASSIVATED JUNCTIONS
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Fabricante Electrónico  DSK [Diode Semiconductor Korea]
Página de inicio  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

1N4933GL Datasheet(HTML) 1 Page - Diode Semiconductor Korea

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FEATURES
Low cost
Glass pa
ssivated junction
Low leakage
Low forward voltage drop
High current capability
and similar solvents
MECHANICAL DATA
Case:JEDEC A-405,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.008 ounces,0.23 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N
4935GL
1N
4936GL
1N
4937GL
UNITS
Maximum recurrent peak reverse voltage
VRRM
200
400
600
V
Maximum RMS voltage
VRMS
140
280
420
V
Maximum DC blocking voltage
VDC
200
400
600
V
Maximum average forw ard rectified current
9.5mm lead length,
@T
A=75
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J=125
Maximum instantaneous forw ard voltage
@1.0 A
VF
V
Maximum reverse current
@T
A=25
at rated DC blocking voltage @T
A=100
Maximym reverse capacitance
(Note1)
trr
ns
Typical junction capacitance
(Note2)
CJ
pF
Typical thermal resistance
(Note3)
RθJA
/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A IR=1A Irr=0.25A.
A - 405
50
35
50
1N
4933GL
Easily cleaned with Freon,Alcohil,Isopropanop
100
70
A
IFSM
3. Thermal resistance f rom junction to ambient.
A
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
- 55---- +175
- 55---- + 175
22.0
The plastic material carries U/L recognition 94V-0
IR
30.0
5.0
100.0
1.3
1N4933GL---1N4937GL
200
12.0
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 1.0 A
100
1N
4934GL
1.0
A
GLASS PASSIVATED JUNCTIONS
IF(AV)
Dimensions in millimeters
www.diode.kr
Diode Semiconductor Korea


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