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IRF034 Datasheet(PDF) 1 Page - International Rectifier

No. de pieza IRF034
Descripción Electrónicos  REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRF034 Datasheet(HTML) 1 Page - International Rectifier

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Absolute Maximum Ratings
Parameter
Units
ID @ VGS = 0V, TC = 25°C
Continuous Drain Current
2 5
ID @ VGS = 0V, TC = 100°C
Continuous Drain Current
1 6
IDM
Pulsed Drain Current ➀
100
PD @ TC = 25°C
Max. Power Dissipation
7 5
W
Linear Derating Factor
0.60
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
19
mJ
IAR
Avalanche Current ➀
-A
EAR
Repetitive Avalanche Energy ➀
-mJ
dv/dt
Peak Diode Recovery dv/dt ➂
4.5
V/ns
T J
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
11.5(typical)
g
PD - 90585
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
o C
A
REPETITIVE AVALANCHE AND dv/dt RATED
IRF034
HEXFET
TRANSISTORS
THRU-HOLE (TO-204AA/AE)
01/23/01
www.irf.com
1
60V, N-CHANNEL
TO-3
Product Summary
Part Number
BVDSS
RDS(on)
ID
IRF034
60V
0.050
25Α
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
For footnotes refer to the last page


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