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UF1J Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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UF1J Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page 4.5± 0.1 1.3± 0.2 0.2± 0.05 5.1± 0.2 FEATURES Low cost Low leakage Low forward voltage drop High current capability MECHANICAL DATA Case:JEDEC DO-214AC,molded plastic Terminals: Solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.002 ounces,0.064 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UF1D UF1G UF1J UF1K UF1M Maximum recurrent peak reverse voltage VRRM 200 400 600 800 1000 V Maximum RMS voltage VRMS 140 280 420 560 700 V Maximum DC blocking voltage V DC 200 400 600 800 1000 V Maximum average forw ard rectified current @T L=90 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage at1.0 A VF 1.4 V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Typical reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG 75 15 12 IR 2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC. 1.0 15 100 50 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A - 55 ---- + 150 35 DO-214AC(SMA) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS The plastic material carries U/L recognition 94V-0 100 50 NOTE: 1. Measured with I F=0.5A, IR=1A, Irr=0.25A. A UF1A---UF1M A 10 Easily cleaned with Alcohol,Isopropanol and similar solvents I F(AV) 1.0 SURFACE MOUNT RECTIFIERS 70 UNITS - 55 ---- + 150 UF1A UF1B 50 100 A 30 IFSM 1.7 Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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