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2SD1615A Datasheet(PDF) 3 Page - Renesas Technology Corp |
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2SD1615A Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 6 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. SILICON TRANSISTOR 2SD1615, 1615A NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DATA SHEET Document No. D10198EJ5V0DS00 (5th edition) Date Published March 2006 NS CP(K) Printed in Japan c 1985 DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 1115A ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) 2SD1615 2SD1615A Collector to Base Voltage VCBO 60 120 V Collector to Emitter Voltage VCEO 50 60 V V A A Emitter to Base Voltage VEBO 6.0 Collector Current (DC) IC (DC) 1.0 Collector Current (Pulse)∗ IC (Pulse) 2.0 Total Power Dissipation ∗∗ PT 2.0 W Junction Temperature Tj 150 °C Storage Temperature Range Tstg −55 to +150 °C ∗ PW ≤ 10 ms, Duty Cycle ≤ 50% ∗∗ When mounted on ceramic substrate of 16 cm2 × 0.7 mm ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Collector Cutoff Current ICBO 100 nA 2SD1615 VCB = 60 V, IE = 0 100 nA 2SD1615A VCB = 120 V, IE = 0 Emitter Cutoff Current IEBO 100 nA VEB = 6.0 V, IC = 0 DC Current Gain hFE1∗∗∗ 135 290 600 2SC1615 VCE = 2.0 V, IC = 100 mA 135 400 2SD1615A DC Current Gain hFE2∗∗∗ 81 270 VCE = 2.0 V, IC = 1.0 A Collector Saturation Voltage VCE(sat)∗∗∗ 0.15 0.3 V IC = 1.0 A, IB = 50 mA Base Saturation Voltage VBE(sat)∗∗∗ 0.9 1.2 V IC = 1.0 A, IB = 50 mA Base to Emitter Voltage VBE∗∗∗ 600 700 mV VCE = 2.0 V, IC = 50 mA Gain Bandwidth Product fT 80 160 MHz VCE = 2.0 V, IE = −100 mA Output Capacitance Cob 19 pF VCB = 10 V, IE = 0, f = 1.0 MHz ∗∗∗ Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2 % hFE Classification MARKING 2SD1615 GM GL GK 2SD1615A GQ GP hFE1 135 to 270 200 to 400 300 to 600 PACKAGE DIMENSIONS in millimeters C EB 4.5 ±0.1 1.6 ±0.2 0.42 ±0.06 0.42 ±0.06 1.5 ±0.1 1.5 3.0 0.41 +0.03 − 0.05 E. Emitter C. Collector B. Base 0.47 ±0.06 |
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