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SD103BW Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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SD103BW Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
2 / 3 page Schottky Barrier Diode SD103AW/SD103BW/SD103CW Parameter Symbol Min. Typ. Max. Unit Conditions Reverse Breakdown Voltage SD103AW SD103BW SD103CW V(BR)R 40 30 20 V IR=10 μA IR=10 μA IR=10 μA Forward voltage VF 0.37 0.60 V IF=20mA IF=200mA Reverse current SD103AW SD103BW SD103CW IRM 5.0 μA VR=30V VR=20V VR=10V Capacitance between terminals CT 50 pF VR=0,f=1MHz Reverse Recovery Time trr 10 ns IR=IF=200mA Irr=0.1*IR,RL=100 Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
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