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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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SD106WS Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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SD106WS Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 3 page  Silicon Epitaxial Planar Diode SD106WS Parameter Symbol Min. Typ. Max. Unit Conditions Reverse breakdown voltage VR 30 V IR=100μA 260 IF=2mA 320 IF=15mA 420 IF=100mA Forward voltage VF 490 550 mV IF=200mA Reverse current IR 5 μA VR=30V Capacitance between terminals CT 15 pF VR=10V,f=1MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
Número de pieza similar - SD106WS |
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Descripción similar - SD106WS |
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