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FMBT2222ADW1 Datasheet(PDF) 3 Page - Formosa MS |
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FMBT2222ADW1 Datasheet(HTML) 3 Page - Formosa MS |
3 / 10 page PARAMETER Collector-Base breakdown voltage Collector-Emitter voltage(3) breakdown Emitter-Base voltage breakdown Base cutoff current CONDITIONS Symbol V (BR)CBO V CEO (BR) V EBO (BR) I BL I CEX MIN. TYP. MAX. 75 40 6.0 20 UNIT V V V nA 10 Formosa MS o Characteristics (AT T =25 C unless otherwise noted) A Off characteristics I = 10uA, I = 0 c E I = 10mA, I = 0 c B I = 10uA, I = 0 E C Collector cutoff current V = 60Vdc, V = 3.0Vdc CE EB(off) V = 60Vdc, V = 3.0Vdc CE EB(off) 3.Pulse test : pukse width < 300uS, duty cycle < 2.0%. PARAMETER DC current gain CONDITIONS Symbol h FE MIN. TYP. MAX. 35 50 100 50 UNIT - Vdc 40 On characteristics(3) I = 0.1mA, V = 10V c CE I = 1.0mA, V = 10V c CE I = 150mA, V = 10V(3) c CE I = 150mA, V = 1.0V(3) c CE I = 500mA, V = 10V(3) c CE Collector-Emitter saturation voltage(3) Base-Emitter saturation voltage(3) I = 150mA, I = 15mA c B I = 500mA, I = 50mA c B I = 150mA, I = 15mA c B I = 500mA, I = 50mA c B Vdc 0.3 1.0 1.2 2.0 0.60 V CE(sat) V BE(sat) PARAMETER Input capacitance CONDITIONS Symbol C ibo MIN. TYP. MAX. 300 8.0 25 2.0 UNIT - Small-signal characteristics I = 20mA, V = 20V, f = 100MHz C CE Output admittance V = 10V, I = 100uA, RS = 1.0K ohms, f = 1.0KHZ CE C dB 300 35 4.0 h fe NF Current-gain-bandwidth product(4) Output capacitance Input impedance Voltage feeback radio Small-signal current gain Noise figure V = 10V, I = 0, f = 1.0MHz CB E V = 0.5V, I = 0, f = 1.0MHz EB C V = 10V, I = 1.0mA, f = 1.0KHz CE C V = 10V, I = 1.0mA, f = 1.0KHz CE C V = 10V, I = 1.0mA, f = 1.0KHz CE C V = 10V, I = 1.0mA, f = 1.0KHz CE C f T C obo h ie h re h oe 0.8 8.0 50 5.0 -4 X 10 umhos pF kohms MHz pF Page 3 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 PARAMETER Storage time CONDITIONS Symbol ts MIN. TYP. MAX. 25 225 UNIT Switching characteristics Delay time Rise time Fall time V = 30V, V =(off) = -0.5V, I = 150mA, I = 15mA CC BE C B1 td tr tf 60 V = 30V, I =150mA, I = I = 15mA CC C B1 B2 nS 10 4.f is defined as the frequency at which h extrapolates to unity. T fe Dual NPN Epitaxial Planar Transistor I EBO 0.01 100 Emitter cutoff current V = 60Vdc, I = 0 CB E I = 0, V = 3.0Vdc C EB Collector cutoff current I CBO 10 O V = 60Vdc, I = 0, T =125 C CB E A uA nA 75 0.25 1.25 4.0 375 75 200 25 V = 20V, I = 20mA, f = 31.8MHz CB E 150 rb, Cc Noise figure ps V = 10V, I = 10mA, f = -1.0KHz CE C V = 10V, I = 10mA, f = -1.0KHz CE C V = 10V, I = 10mA, f = -1.0KHz CE C V = 10V, I = 10mA, f = 1.0KHz CE C O I = 10mA, V = 10V, T = -55 C c CE A Document ID Issued Date Revised Date Revision Page. 300 DS-231148 2009/08/10 2010/05/10 B 10 FMBT2222ADW1 |
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