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TPD1E10B09DPYT Datasheet(PDF) 7 Page - Texas Instruments

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No. de pieza TPD1E10B09DPYT
Descripción Electrónicos  Single-Channel ESD Protection Device in 0402 Package
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI1 - Texas Instruments

TPD1E10B09DPYT Datasheet(HTML) 7 Page - Texas Instruments

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TPD1E10B09
www.ti.com
SLLSEB0D – FEBRUARY 2012 – REVISED SEPTEMBER 2015
7 Detailed Description
7.1 Overview
TPD1E10B09 is a single-channel ESD TVS that provides ±20-kV IEC 61000-4-2 (Level 4) contact and air-gap
ESD protection. The 10-pF back-to-back diode architecture is suitable for signals that range from –9 V to 9 V and
supports data rates up to 500 Mbps. The industry-standard 0402 package is convenient for placement in
applications with limited space.
7.2 Functional Block Diagram
7.3 Feature Description
TPD1E10B09 is a bidirectional TVS with high ESD protection level. This device protects circuit from ESD strikes
up to ±20-kV contact and ±20-kV air-gap specified in the IEC 61000-4-2 level 4 international standard. The
device can also handle up to 4.5-A surge current (IEC 61000-4-5 8/20 µs). The I/O capacitance of 10 pF
supports a data rate up to 500 Mbps. This clamping device has a small dynamic resistance of 0.5
Ω typically.
This makes the clamping voltage low when the device is actively protecting other circuits. For example, the
clamping voltage is only 13 V when the device is taking 1-A transient current. The breakdown is bidirectional so
that this protection device is a good fit for GPIO, especially audio lines which carry bidirectional signals. Low
leakage allows the diode to conserve power when working below the VRWM. The industrial temperature range of
–40°C to 125°C makes this ESD device work at extensive temperatures in most environments. The space-saving
0402 package can fit into small electronic devices like mobile equipment and wearables.
7.4 Device Functional Modes
TPD1E10B09 is a passive clamp that has low leakage during normal operation when the voltage between pin 1
and pin 2 is below VRWM and activates when the voltage between pin 1 and pin 2 goes above VBR. During IEC
ESD events, transient voltages as high as ±20 kV can be clamped between the two pins. When the voltages on
the protected lines fall below the trigger voltage, the device reverts back to the low leakage passive state.
Copyright © 2012–2015, Texas Instruments Incorporated
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