TPIC5401NE datasheet(8/17 Pages) TI1

No. de pieza	TPIC5401NE

Descripción Electrónicos	H-BRIDGE GATE-PROTECTED POWER DMOS ARRAY

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TPIC5401

H-BRIDGE GATE-PROTECTED

POWER DMOS ARRAY

SLIS024A – DECEMBER 1993 – REVISED MARCH 1994

8

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 11

CAPACITANCE

vs

DRAIN-TO-SOURCE VOLTAGE

150

100

50

0

200

250

300

0

10

203040

500

450

400

350

VDS – Drain-to-Source Voltage – V

Coss

Crss

Ciss

f = 1 MHz

VGS = 0

TJ = 25°C

SOURCE-TO-DRAIN DIODE CURRENT

vs

SOURCE-TO-DRAIN VOLTAGE

Figure 12

VSD – Source-to-Drain Voltage – V

0.6

0.4

0.2

0.1

1

2

4

10

6

0.1

10

1

TJ = – 40°C

TJ = 25°C

TJ = 75°C

TJ = 150°C

TJ = 125°C

VGS = 0

Figure 13

DRAIN-TO-SOURCE VOLTAGE

AND GATE-TO-SOURCE VOLTAGE

vs

GATE CHARGE

Qg – Gate Charge – nC

0

1

234

5

6

7

30

20

10

0

40

50

60

6

4

2

0

8

10

12

VDD = 20 V

VDD = 48 V

VDD = 30 V

ID = 1 A

TJ = 25°C

See Figure 3

Figure 14

REVERSE-RECOVERY TIME

vs

REVERSE di/dt

Reverse di/dt – A/

µs

200

100

50

0

100

200

300

400

500

300

350

400

600

250

150

Z2 and Z4

VDS = 48 V

VGS = 0

IS = 1 A

TJ = 25°C

See Figure 1

Z1 and Z3

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