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SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS ISSUE 2 SEPTEMBER 1995 7 PARTMARKING DETAILS BSS66 - M6 BSS67 - M7 BSS66R - M8 BSS67R - M9 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6V Peak Pulse Current ICM 200 mA Continuous Collector Current IC 100 mA Base Current IB 50 mA Power Dissipation at Tamb=25°C PTOT 330 mW Operating and Storage Temperature Range tj:tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC=1mA Collector-Base Breakdown Voltage V(BR)CBO 60 V IC=10µA Emitter-Base Breakdown Voltage V(BR)EBO 6V IE=10µA Collector- Emitter Cut-off Current ICES 50 nA VCES=30V Collector-Emitter Saturation Voltage VCE(sat) 0.20 0.30 V V IC=10mA, IB=1mA IC=50mA, IB=5mA* Base-Emitter Saturation Voltage VBE(sat) 0.65 0.85 0.95 V V IC=10mA, IB=1mA IC=50mA, IB=5mA* Static Forward Current BSS66 Transfer Ratio hFE 20 35 50 30 15 150 IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, Static Forward Current BSS67 Transfer Ratio hFE 40 70 100 60 30 300 IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, Transition Frequency BSS66 BSS67 fT 250 300 MHz MHz IC=10mA, VCE=20V f=100MHz Collector-Base Capacitance Cobo 4pF VCB=5V, f=100kHz Emitter-Base Capacitance Cibo 8pF VEB=0.5V, f=100kHz Noise Figure N Typ. 6 dB IC=100µA, VCE=5V RS=1kΩ, f=10Hz to15.7 kHz Switching times: Delay; Rise Storage Time Fall Time td; tf ts tf 35 200 50 ns ns ns VCC=3V, IC=10mA IB1= IB2 =1mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% BSS66 BSS67 C B E PAGE NUMBER |
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