© Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 0

1

Publication Order Number:

NTP45N06/D

NTP45N06, NTB45N06

Power MOSFET

45 Amps, 60 Volts

N–Channel TO–220 and D2PAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Features

Typical Applications

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

VDSS

60

Vdc

Drain–to–Gate Voltage (RGS = 10 MΩ)

VDGR

60

Vdc

Gate–to–Source Voltage

– Continuous

– Non–Repetitive (tpv10 ms)

VGS

VGS

"20

"30

Vdc

Drain Current

– Continuous @ TA = 25°C

– Continuous @ TA = 100°C

– Single Pulse (tpv10 µs)

ID

ID

IDM

45

30

150

Adc

Apk

Total Power Dissipation @ TA = 25°C

Derate above 25

°C

Total Power Dissipation @ TA = 25°C (Note 1.)

Total Power Dissipation @ TA = 25°C (Note 2.)

PD

125

0.83

3.2

2.4

W

W/

°C

W

W

Operating and Storage Temperature Range

TJ, Tstg –55 to

+175

°C

Single Pulse Drain–to–Source Avalanche

Energy – Starting TJ = 25°C

(VDD = 50 Vdc, VGS = 10 Vdc, RG = 25 Ω,

IL(pk) = 40 A, L = 0.3 mH, VDS = 60 Vdc)

EAS

240

mJ

1. When surface mounted to an FR4 board using 1

″ pad size,

(Cu Area 1.127 in2).

2. When surface mounted to an FR4 board using the minimum recommended

pad size, (Cu Area 0.412 in2).

NTP45N06

LLYWW

NTB45N06

LLYWW

45 AMPERES

60 VOLTS

RDS(on) = 26 mΩ

Device

Package

Shipping

ORDERING INFORMATION

NTP45N06

TO–220AB

50 Units/Rail

TO–220AB

CASE 221A

STYLE 5

1

2

3

4

http://onsemi.com

N–Channel

D

S

G

MARKING DIAGRAMS

& PIN ASSIGNMENTS

NTx45N06

= Device Code

LL

= Location Code

Y

= Year

WW

= Work Week

1

Gate

3

Source

4

Drain

2

Drain

1

Gate

3

Source

4

Drain

2

Drain

1

2

3

4

D2PAK

CASE 418B

STYLE 2

NTB45N06

D2PAK

50 Units/Rail

NTB45N06T4

D2PAK

800/Tape & Reel