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BC846 Datasheet(Hoja de datos) 1 Page - List of Unclassifed Manufacturers

No. de Pieza. BC846
Descripción  SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS
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SOT23 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 6 - JANUARY 1997
PARTMARKING DETAILS
COMPLEMENTARY TYPES
BC846A–Z1A
BC848B–1K
BC846
BC856
BC846B–1B
BC848C–Z1L
BC847
BC857
BC847A–Z1E
BC849B–2B
BC848
BC858
BC847B–1F
BC849C–2C
BC849
BC859
BC847C–1GZ
BC850B–2FZ
BC850
BC860
BC848A–1JZ
BC850C-Z2G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BC846
BC847
BC848
BC849
BC850
UNIT
Collector-Base Voltage
VCBO
80
50
30
30
50
V
Collector-Emitter Voltage
VCES
80
50
30
30
50
V
Collector-Emitter Voltage
VCEO
65
45
30
30
45
V
Emitter-Base Voltage
VEBO
65
V
Continuous Collector Current
IC
100
mA
Peak Collector Current
ICM
200
mA
Peak Base Current
IBM
200
mA
Peak Emitter Current
IEM
200
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage
Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
BC846 BC847 BC848 BC849 BC850
UNIT CONDITIONS.
Collector Cut-Off Current ICBO
Max
15
nA
VCB= 30V
Max
5
µ
A
VCB= 30V
Tamb=150°C
Collector-Emitter
Saturation Voltage
VCE(sat) Typ
Max.
90
250
mV
mV
IC=10mA,
IB=0.5mA
Typ
Max.
200
600
mV
mV
IC=100mA,
IB=5mA
Typ
Max.
300
600
mV
mV
IC=10mA*
Base-Emitter
Saturation Voltage
VBE(sat) Typ
700
mV
IC=10mA,
IB=0.5mA
Typ
900
mV
IC=100mA,
IB=5mA
Base-Emitter Voltage
VBE
Min
Typ
Max
580
660
700
mV
mV
mV
IC=2mA
VCE=5V
Max
770
mV
IC=10mA
VCE=5V
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the
operating point IC= 11mA, VCE= 1V at constant base current.
BC846
BC847
BC848
BC849
BC850
C
B
E
SOT23




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