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Si8283CD-IS Datasheet(PDF) 6 Page - Silicon Laboratories |
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Si8283CD-IS Datasheet(HTML) 6 Page - Silicon Laboratories |
6 / 43 page 2.11 Miller Clamp IGBT power circuits are commonly connected in a half bridge configuration with the collector of the bottom IGBT tied to the emitter of the top IGBT. When the upper IGBT turns on (while the bottom IGBT is in the off state), the voltage on the collector of the bottom IGBT flies up sever- al hundred volts quickly (fast dV/dt). This fast dV/dt induces a current across the IGBT collector-to-gate capacitor (CCG that constitutes a positive gate voltage spike and can turn on the bottom IGBT. This behavior is called Miller parasitic turn on and can be destructive to the switch since it causes shoot through current from the rail right across the two IGBTs to ground. The Si828x Miller clamp’s purpose is to clamp the gate of the IGBT device being driven by the Si828x to prevent IGBT turn on due to the collector CCG coupling. RL VL VH Driver Control RH 2.0 V CLMP Driver Control Soft Shutdown RSS VSSB VSSB VSSB VDDB CCG Figure 2.4. Miller Clamp Device The Miller clamp device (Clamp) is engaged after the main driver had been on (VL) and pulled IGBT gate voltage close to VSSB, such that one can consider the IGBT being already off. This timing prevents the Miller clamp from interfering with the driver’s operation. The engaging of the Miller Clamp is done by comparing the IGBT gate voltage with a 2.0 V reference (relative to VSSB) before turning on the Miller clamp NMOS. Si8281/82/83/84 Data Sheet System Overview silabs.com | Smart. Connected. Energy-friendly. Preliminary Rev. 0.5 | 5 |
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