Philips Semiconductors

Product Specification

PowerMOS transistor

BUK219-50Y

TOPFET high side switch

DESCRIPTION

QUICK REFERENCE DATA

Monolithic single channel high side

SYMBOL

PARAMETER

MIN.

UNIT

protected power switch in

TOPFET2 technology assembled in

I

L

Nominal load current (ISO)

2

A

a 5 pin plastic package.

APPLICATIONS

SYMBOL

PARAMETER

MAX.

UNIT

General controller for driving

V

BG

Continuous off-state supply voltage

50

V

lamps, motors, solenoids, heaters.

I

L

Continuous load current

6

A

T

j

Continuous junction temperature

150

˚C

R

ON

On-state resistance

T

180

m

Ω

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Vertical power TrenchMOS

Low on-state resistance

CMOS logic compatible

Very low quiescent current

Overtemperature protection

Load current limiting

Latched overload and

short circuit protection

Overvoltage and undervoltage

shutdown with hysteresis

On-state open circuit load

detection

Diagnostic status indication

Voltage clamping for turn off

of inductive loads

ESD protection on all pins

Reverse battery, overvoltage

and transient protection

Fig.1. Elements of the TOPFET HSS with internal ground resistor.

PINNING - SOT263B-01

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

Ground

2

Input

3

Battery (+ve supply)

4

Status

5

Load

Fig. 2.

Fig. 3.

tab

connected to pin 3

BATT

LOAD

INPUT

GROUND

STATUS

POWER

MOSFET

RG

CONTROL &

PROTECTION

CIRCUITS

12345

MBL267

Front view

mb

mb

B

G

L

I

S

HSS

TOPFET

July 2001

1

Rev 2.000