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CS5525-AP Datasheet(PDF) 8 Page - Cirrus Logic

No. de pieza CS5525-AP
Descripción Electrónicos  16 BIT / 20 BIT MULTI RANGE ADC WITH 4 BIT LATCH
Download  29 Pages
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Fabricante Electrónico  CIRRUS [Cirrus Logic]
Página de inicio  http://www.cirrus.com
Logo CIRRUS - Cirrus Logic

CS5525-AP Datasheet(HTML) 8 Page - Cirrus Logic

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CS5525 CS5526
8
DS202F3
DETAILED DESCRIPTION
The CS5525 and CS5526 are 16-bit and 20-bit pin
compatible converters which include a chopper-
stabilized instrumentation amplifier input, and an
on-chip programmable gain amplifier. They are
both optimized for measuring low-level unipolar or
bipolar signals in process control and medical ap-
plications.
The CS5525/26 also include a fourth order delta-
sigma modulator, a calibration microcontroller,
eight digital filters, a 4-bit analog latch, and a serial
port.
The digital filters provide any one of eight
different output update rates.
The CS5525/26 include a CPD (Charge Pump
Drive) output (shown in Figure 1). CPD provides a
negative bias voltage to the on-chip instrumenta-
tion amplifier when used with a combination of ex-
ternal diodes and capacitors. This enables the
CS5525/26 to measure negative voltages with re-
spect to ground, making the converters ideal for
thermocouple temperature measurements.
Theory of Operation
The CS5525/26 A/D converters are designed to op-
erate from a single +5 V analog supply and provide
several different input ranges. See the Analog
Characteristics section on page 3 for details.
Figure 1 illustrates the CS5525/26 connected to
generate their own negative bias supply using the
on-chip CPD (Charge Pump Drive). This enables
the CS5525/26 to measure ground referenced sig-
nals with magnitudes down to NBV (Negative Bias
Voltage, approximately -2.1 V in this example).
Figure 2 illustrates a charge pump circuit when the
converters are powered from a +3.0 V digital sup-
ply. Alternatively, the negative bias supply can be
generated from a negative supply voltage or a resis-
tive divider as illustrated in Figure 3.
XO U T
VD +
VA +
VR E F +
VR EF -
DG N D
NB V
AIN +
SC LK
SD O
SD I
C S 552 5
XIN
CP D
CS
10
+5V
An alo g
Su pp ly
0.1
µ F0 .1 µF
20
19
3
1
AG N D
213
11
14
17
18
12
5
Se ria l
Data
In te rfa ce
8
2.5V
U p to ± 1 0 0 m V In p u t
AIN -
4
10 k
0.1
µ F
N o te : C old-junc tion
m eas urem en t is perform ed
by a s ec ond A /D o r v ia a
m u ltip le x e r.
10
µ F
0.015
µ F
1N 4 148
1N 4 148
+
BAV1 9 9
16
A3
15
A2
7
A1
6
A0
C harge-pum p n etw o rk
fo r V D + = 5 V o n ly a n d
X IN = 32.768 k H z .
C S 55 26
*5M
*
O p tional, s ee C harge
P u m p D riv e s ec tion.
L ogic O utputs :
A0 - A 3 S w itc h fro m V A+ to AG N D .
10 k
10
9
O p tional
Clo c k
S ourc e
32 .76 8 ~ 100 kH z
20 pF
50 0k
Figure 1. CS5525/26 Configured to use on-chip charge pump to supply NBV.


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