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SI4812DY-T1 Datasheet(PDF) 3 Page - Vishay Siliconix

No. de pieza SI4812DY-T1
Descripción Electrónicos  N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Fabricante Electrónico  VISHAY [Vishay Siliconix]
Página de inicio  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4812DY-T1 Datasheet(HTML) 3 Page - Vishay Siliconix

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Si4812DY
Vishay Siliconix
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.8
1.0
1.2
1.4
1.6
−50
−25
0
25
50
75
100
125
150
0
2
4
6
8
10
0
5
10
15
20
25
VDS = 15 V
ID = 9 A
VGS = 10 V
ID = 9 A
Output Characteristics
Transfer Characteristics
Gate Charge
On-Resistance vs. Drain Current
VDS − Drain-to-Source Voltage (V)
VGS − Gate-to-Source Voltage (V)
Qg − Total Gate Charge (nC)
VDS − Drain-to-Source Voltage (V)
ID − Drain Current (A)
Capacitance
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
0
10
20
30
40
50
0
1234
5
0
300
600
900
1200
1500
1800
0
5
10
15
20
25
30
0
10
20
30
40
50
0
1234
5
0.00
0.02
0.04
0.06
0.08
0.10
0
10203040
50
VGS = 10 thru 5 V
TC = 125_C
−55_C
Crss
Coss
Ciss
VGS = 10 V
VGS = 4.5 V
3 V
25_C
4 V


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