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SI4812DY-T1 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4812DY-T1 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si4812DY Vishay Siliconix Document Number: 71775 S-41426—Rev. G, 26-Jul-04 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.6 0.8 1.0 1.2 1.4 1.6 −50 −25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 5 10 15 20 25 VDS = 15 V ID = 9 A VGS = 10 V ID = 9 A Output Characteristics Transfer Characteristics Gate Charge On-Resistance vs. Drain Current VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) Qg − Total Gate Charge (nC) VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) 0 10 20 30 40 50 0 1234 5 0 300 600 900 1200 1500 1800 0 5 10 15 20 25 30 0 10 20 30 40 50 0 1234 5 0.00 0.02 0.04 0.06 0.08 0.10 0 10203040 50 VGS = 10 thru 5 V TC = 125_C −55_C Crss Coss Ciss VGS = 10 V VGS = 4.5 V 3 V 25_C 4 V |
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