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TPCF8102 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TPCF8102 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPCF8102 2004-07-06 4 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1 −2 −3 −4 −5 VGS = −1.4 V Common source Ta = 25°C Pulse test −1.5 −1.6 −1.7 −1.8 −1.9 −2.5 −2 −3 −4 −5 −4.5 Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS Gate-source voltage VGS (V) VDS – VGS Drain current ID (A) |Yfs| – ID Drain current ID (A) RDS (ON) – ID 0 0 −1 −2 −3 −4 −5 −2 −4 −6 −8 −10 VGS = −1.4 V Common source Ta = 25°C Pulse test −1.5 −1.6 −1.7 −1.8 −1.9 −2 −2.5 −3 −4 −5 0 0 −0.5 −1.0 −1.5 −2.0 −2.5 −2 −4 −6 −8 −10 Ta = −55°C Ta = 100°C Ta = 25°C Common source VDS = −10 V Pulse test 0 0 −2 −4 −6 −10 −0.1 −0.2 −0.3 −0.4 −0.5 −8 Common source Ta = 25°C Pulse test ID = −6 A −3 A −1.5 A 1 −0.1 −1 −10 −100 10 100 1000 Common source Ta = 25°C Pulse test VGS = −4.5 V −2.5 V −1.8 V 0.1 −0.1 −1 −10 −100 1 10 100 Common source VDS = −10 V Pulse test Ta = 100°C Ta = −55°C Ta = 25°C |
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