KM29U128IT datasheet(1/26 Pages) SAMSUNG

No. de pieza	KM29U128IT

Descripción Electrónicos	16M x 8 Bit NAND Flash Memory

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Fabricante Electrónico	SAMSUNG [Samsung semiconductor]

Página de inicio	http://www.samsung.com/Products/Semiconductor

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KM29U128T, KM29U128IT

FLASH MEMORY

1

Document Title

16M x 8 Bit NAND Flash Memory

Revision History

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

Revision No.

0.0

1.0

1.1

Remark

Preliminary

Final

History

Initial issue.

1) Changed tPROG Parameter : 1ms(Max.)

→ 500µs(Max.)

2) Changed tBERS Parameter : 4ms(Max.)

→ 3ms(Max.)

3) Changed Input and Output Timing Level 0.8V and 2.0V

→ 1.5V

1) Changed tR Parameter : 7

µs(Max.) → 10µs(Max.)

2) Changed Nop : 10 cycles(Max.)

→ Main Array

2 cycles(Max.)

Spare Array 3 cycles(Max.)

3) Added CE don’t care mode during the data-loading and reading

Draft Date

April 10th 1998

July 14th 1998

April 10th 1999

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