BC846BDW1T1 datasheet(3/6 Pages) ONSEMI

No. de pieza	BC846BDW1T1

Descripción Electrónicos	Dual General Purpose Transistors

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Fabricante Electrónico	ONSEMI [ON Semiconductor]

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BC846BDW1T1, BC847BDW1T1, BC848CDW1T1

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TYPICAL CHARACTERISTICS − BC847 & BC848

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

0.2

0.5

1.0

10

20

50

0.2

100

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

2.0

5.0

200

0.6

0.7

0.8

0.9

1.0

0.5

0

0.2

0.4

0.1

0.3

1.6

1.2

2.0

2.8

2.4

1.2

1.6

2.0

0.02

1.0

10

0

20

0.1

0.4

0.8

1.5

1.0

0.8

0.6

0.4

0.3

0.2

0.5

1.0

10

20

50

2.0

100

70

30

7.0

5.0

3.0

0.7

0.3

0.1

0.2

1.0

10

100

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

VCE = 10 V

TA = 25°C

−55°C to +125°C

TA = 25°C

IC = 50 mA

IC = 100 mA

IC = 200 mA

IC =

20 mA

IC =

10 mA

1.0

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

10

Figure 6. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

0.4 0.6

1.0

10

20

1.0

2.0

6.0

40

80

100

200

300

400

60

20

40

30

7.0

5.0

3.0

2.0

0.7 1.0

10

20

2.0

50

30

7.0

5.0

3.0

0.5

VCE = 10 V

TA = 25°C

0.8

4.0

8.0

TA = 25°C

Cob

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