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CSD13380F3 Datasheet(PDF) 1 Page - Texas Instruments |
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CSD13380F3 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 14 page 0.64 mm 0.35 mm D G S Product Folder Sample & Buy Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD13380F3 SLPS593 – OCTOBER 2016 CSD13380F3 12-V N-Channel FemtoFET™ MOSFET 1 1 Features 1 • Low On Resistance • Ultra-Low Qg and Qgd • High Operating Drain Current • Ultra-Small Footprint – 0.73 mm × 0.64 mm • Low Profile – 0.35-mm Max Height • Integrated ESD Protection Diode – Rated > 3-kV HBM – Rated > 2-kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This 63-mΩ, 12-V N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. . . Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 12 V Qg Gate Charge Total (4.5 V) 0.91 nC Qgd Gate Charge Gate-to-Drain 0.15 nC RDS(on) Drain-to-Source On Resistance VGS = 1.8 V 96 m Ω VGS = 2.5 V 73 VGS = 4.5 V 63 VGS(th) Threshold Voltage 0.85 V Device Information(1) DEVICE QTY MEDIA PACKAGE SHIP CSD13380F3 3000 7-Inch Reel Femto 0.73 mm × 0.64 mm Land Grid Array (LGA) Tape and Reel CSD13380F3T 250 (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C (unless otherwise stated) VALUE UNIT VDS Drain-to-Source Voltage 12 V VGS Gate-to-Source Voltage 8 V ID Continuous Drain Current(1) 3.6 A Continuous Drain Current(2) 2.1 IDM Pulsed Drain Current(2)(3) 13.5 A PD Power Dissipation(1) 1.4 W Power Dissipation(2) 0.5 V(ESD) Human-Body Model (HBM) 3 kV Charged-Device Model (CDM) 2 TJ, Tstg Operating Junction, Storage Temperature –55 to 150 °C (1) Max Cu, typical RθJA = 90°C/W on 1-in 2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB. (2) Min Cu, typical RθJA = 255°C/W. (3) Pulse duration ≤ 100 μs, duty cycle ≤ 1%. . Typical Part Dimensions Top View |
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