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LM1893 Datasheet(PDF) 10 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No. de pieza LM1893
Descripción Electrónicos  LM1893/LM2893 Carrier-Current Transceiver
Download  24 Pages
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM1893 Datasheet(HTML) 10 Page - National Semiconductor (TI)

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Component Selection (Continued)
CC
Capacitor CC’s primary function is to block the power line
voltage from T1’s line-side winding Also CC and T1’s line-
side winding comprise a LC highpass filter The self-induc-
tance of T1 is far too low to support a direct line connection
CC must have a low enough impedance at FO to allow T1 to
drive transmitted energy onto the line To drive a 14X power
line the impedance of CC should be below 14X
Use
Figure 9 to find the reactive impedance of CC to check
that it is less than the line impedance Then check
Figure 10
to see that the power line current is small enough to keep
T1 well out of saturation the recommended transformers
can withstand a 10 Amp-turn magnetizing force (1 Amp
through the worst-case 10 turn line-side winding)
Caution is required when choosing CC to avoid series reso-
nance of the series combination of CC the transformer in-
ductance and the reflected tank impedance The low resist-
ance of the network under series resonance will load the
line possibly decreasing range For your particular line cou-
pling circuit measure for series resonance using some ex-
pected line impedance load
RB
This base-bleed resistor turns QB off quickly - important
since the amplifier output swing is about 200V ms An RB
below about 24X will conduct excessive current and over-
load the chip amplifier and is not recommended
TLH6750 – 11
FIGURE 9 CC’s impedance should be
as a rule-of-thumb smaller than the lowest
expected line impedance
RG
This resistor in parallel with the internal 10X resistor fixes
the current gain of the output amplifier and so the output
current amplitude
Figure 11 gives output current and mini-
mum AC current gain hfe for QB when RG is used to boost
output current
QB
The boost gain transistor QB must be fast Double-diffused
devices with 50 MHz FT’s work slower transistors (epi-base
types) do not preserve a sinusoidal waveform when FO is
high or will cause the output amp to oscillate QB must have
a certain minimum hfe for given boost levels as shown in
Figure 11 Figure 12 shows the power QB must dissipate
continuously operating with a shorted output BVCER (R e
RB) must be 60V or greater and QB must have adequate
SOA for transient survival
ZT
Unfortunately potentially damaging transient energy passes
through transformer T1 onto the Carrier IO pin (instanta-
neous power of greater than 1 kW has been measured us-
ing the recommended transformers) For self protection the
Carrier IO has an internal 44V voltage clamp with a 20X
series resistance A parallel low impedance 44V external
transient suppression diode will then conduct the lion’s
share of any current when transients force the Carrier IO to
a high voltage
TLH6750 – 12
FIGURE 10 The AC line-induced current passed by CC
TLH6750 – 13
FIGURE 11 Output amplifier current and required min
QB hfe versus gain-setting resistor RG
TLH6750 – 14
FIGURE 12 Boost transistor power dissipation versus
amplifier output current
ZT must be used unless some precaution is taken to protect
the Carrier IO pin from line transients or transients caused
when stored line energy in CC is discharged by the random
phase of power line connection and disconnection Worst
case CC may discharge a full peak-to-peak line voltage into
the tuned circuit Another way to reduce the need for ZT is
by placing another magnetic circuit in the signal path that
relies on a high but easily saturated permeability to couple
a primary and secondary winding - a toroidal transformer for
example Toroids cost more than ZT
Use an avalanche diode designed specifically for transient
suppression
they have orders of magnitude higher pulse
10


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