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FP2189 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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FP2189 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
1 / 6 page This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • Web site: www.wj.com May 2002 The Communications Edge TM Preliminary Product Information FP2189 1 Watt HFET Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface- mount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +4 5 dBm output IP3 performance and an output power of +31 dBm at 1-dB compression. The device conforms to WJ Communications’ long history of producing high reliability and quality components. The FP2189 has an associated MTBF of greater than 100 years at a mounting temperature of 85 °C. All devices are 100% RF & DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required. Functional Diagram 1 3 2 4 Function Pin No. Input 1 Ground 2 Output/Bias 3 Ground 4 Specifications DC Electrical Parameter Units Min Typ Max Saturated Drain Current1, Idss mA 500 Transconductance, Gm mS 350 Pinch Off Voltage2, Vp V -2.0 Parameters3 Units Min Typ Max Frequency Range MHz 50 4000 Small Signal Gain, Gss dB 15 Output P1dB dBm +31 Output IP34 dBm +45 Thermal Resistance °C/W 30 1. Idss is measured with Vgs = 0 V, Vds = 3 V. 2. Pinch-off voltage is measured when Ids = 0.4 mA. 3. Test conditions unless otherwise noted: T = 25ºC, VDS = 8 V, IDQ = 250 mA, frequency = 900 MHz in an application circuit with ZL = ZLOPT, ZS = ZSOPT . 4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Ratings Parameters Rating Operating Case Temperature -40 to +85 °C Storage Temperature -40 to +125 °C Maximum DC Power 4.0 W RF Input Power (continuous) +20 dBm Operation of this device above any of there parameters may cause permanent damage Typical Parameters5 Parameter Units Typical Frequency MHz 915 1960 2140 S21 dB 19.1 15.2 13.8 S11 dB -17 -16 -23 S22 dB -10 -8 -9 Output P1dB dBm +30.3 +30.8 +31.4 Output IP3 dBm +44.3 +44.2 +45.5 Noise Figure dB 4.2 3.5 4.5 Vdd V +8 +8 +8 Idq 6 mA 250 250 250 Idd at P1dB mA 260 330 320 5. Typical parameters represent performance in an application circuit. 6. Idq is the quiescent drain current at small signal output levels. The current may increase as the output power is increased near its compression point. Ordering Information Part No. Description FP2189 1-Watt HFET (Available in Tape & Reel) FP2189-PCB900S 900 MHz Application Circuit FP2189-PCB1900S 1900 MHz Application Circuit FP2189-PCB2140S 2140 MHz Application Circuit |
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