Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
SI4563DY Datasheet(PDF) 9 Page - Vishay Siliconix |
|
SI4563DY Datasheet(HTML) 9 Page - Vishay Siliconix |
9 / 12 page Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 9 Vishay Siliconix Si4563DY P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.3 0.6 0.9 1.2 1.5 10 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) 1 0.1 100 - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 0.5 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.04 0.08 0.12 0.16 0.20 012 345 67 89 10 VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C ID = 5 A 0 30 50 10 20 Time (s) 40 110 0.1 0.01 0.001 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 1 ms TA = 25 °C Single Pulse 10 ms 100 ms DC VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1 s 10 s Limited by RDS(on)* |
Número de pieza similar - SI4563DY |
|
Descripción similar - SI4563DY |
|
|
Enlace URL |
Política de Privacidad |
ALLDATASHEET.ES |
¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |