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SI4563DY Datasheet(PDF) 11 Page - Vishay Siliconix |
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SI4563DY Datasheet(HTML) 11 Page - Vishay Siliconix |
11 / 12 page Document Number: 73513 S09-0393-Rev. C, 09-Mar-09 www.vishay.com 11 Vishay Siliconix Si4563DY P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73513. Normalized Thermal Transient Impedance, Junction-to-Ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 1 0.1 0.01 0.5 0.2 0.1 0.05 Single Pulse Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 120 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Duty Cycle = 0.5 0.02 Normalized Thermal Transient Impedance, Junction-to-Case 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 0.5 |
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