SI5980DU datasheet(5/7 Pages) VISHAY

No. de pieza	SI5980DU

Descripción Electrónicos	Dual N-Channel 100-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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5 / 7 page

Document Number: 65576

S10-0033-Rev. A, 11-Jan-10

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Vishay Siliconix

Si5980DU

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Case

0

2

4

6

8

10

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.3

0.6

0.9

1.2

1.5

0

25

50

75

100

125

150

TA -Ambient Temperature (°C)

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SI5980DU Datasheet(PDF) 5 Page - Vishay Siliconix

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Número de pieza similar - SI5980DU

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