2SK3018 datasheet(1/5 Pages) JIANGSU

No. de pieza	2SK3018

Descripción Electrónicos	N-channel MOSFET

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Fabricante Electrónico	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Página de inicio	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate

MOSFETS

2SK3018 N-channel MOSFET

SOT-323

1. GATE

2. SOURCE

3. DRAIN

MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

VDS

Drain-Source voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current

0.1

A

PD

Power Dissipation

0.2

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

RθJA

Thermal Resistance

from Junction to Ambient

625

℃ /W

www.cj-elec.com

1

D,Apr,2015

M

ARKING

Equivalent Circuit

FEATURE

Low on-resistance

Fast switching speed

Low voltage drive makes this device ideal for

Easily designed drive circuits

Easy to parallel

Portable equipment

V(BR)DSS

RDS(on)MAX

ID

30 V

8Ω@4V

100mA

13Ω@2.5V

Interfacing , Switching

APPLICATION

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2SK3018 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

2SK3018 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd

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