STF5N80K5

Electrical characteristics

DocID028509 Rev 3

5/13

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

= 4.7 Ω

see Figure 14: "Test circuit for

resistive load switching times" and

Figure 19: "Switching time

waveform"

-

12.7

-

ns

Rise time

-

11.7

-

ns

Turn-off delay time

-

23

-

ns

Fall time

-

14.8

-

ns

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

4

A

Source-drain current (pulsed)

-

16

A

VSD(2)

Forward on voltage

-

1.6

V

Reverse recovery time

see Figure 16: "Test circuit

for inductive load switching

and diode recovery times"

-

265

ns

Qrr

Reverrse recovery charge

-

1.59

µC

Reverse recovery current

-

12

A

Reverse recovery time

see Figure 16: "Test circuit

for inductive load switching

and diode recovery times"

-

386

ns

Reverse recovery charge

-

2.18

µC

Reverse recovery current

-

11.3

A

Notes:

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Gate-source breakdown voltage

30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.