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F0122PA050SC01 Datasheet(PDF) 3 Page - Vincotech |
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F0122PA050SC01 Datasheet(HTML) 3 Page - Vincotech |
3 / 15 page FZ12 / F0122PA050SC01 preliminary datasheet Parameter Symbol Unit VGE [V] or VGS [V] Vr [V] or VCE [V] or VDS [V] IC [A] or IF [A] or ID [A] Tj Min Typ Max Tj=25°C 5 5,8 6,5 Tj=150°C Tj=25°C 1,5 1,96 2,3 Tj=150°C 2,33 Tj=25°C 0,02 Tj=150°C Tj=25°C 700 Tj=150°C Tj=25°C 102 Tj=150°C 106 Tj=25°C 17 Tj=150°C 24 Tj=25°C 225 Tj=150°C 289 Tj=25°C 97 Tj=150°C 131 Tj=25°C 2,49 Tj=150°C 4,04 Tj=25°C 2,88 Tj=150°C 4,63 Thermal resistance chip to heatsink per chip RthJH 0,45 Thermal resistance chip to case per chip RthJC Tj=25°C 1 1,76 2,2 Tj=150°C 1,69 Tj=25°C 80,03 Tj=150°C 87 Tj=25°C 128,7 Tj=150°C 290,7 Tj=25°C 4,26 Tj=150°C 8,9 di(rec)max Tj=25°C 4953 /dt Tj=150°C 1407 Tj=25°C 1,57 Tj=150°C 3,55 Thermal resistance chip to heatsink per chip RthJH 0,64 Thermal resistance chip to case per chip RthJC V pF mWs Ω ns ns mA 193 2770 205 Rgon=8 Ω 600 25 0 1200 50 0,0018 Rgoff=8 Ω ±15 600 50 Gate-emitter leakage current Integrated Gate resistor Inverter Transistor Gate emitter threshold voltage Fall time Turn-off delay time Turn-on delay time Rise time Gate charge Reverse recovery time Reverse recovered energy Peak rate of fall of recovery current Reverse recovered charge Inverter Diode Diode forward voltage ±15 50 50 f=1MHz Rgon=8 Ω 0 20 15 A μC mWs A/ μs 160 Characteristic Values Value Conditions Input capacitance Output capacitance Turn-off energy loss per pulse Collector-emitter saturation voltage Turn-on energy loss per pulse Collector-emitter cut-off current incl. Diode Erec Coss Rgint tf Eon Eoff IRRM td(on) Crss IGES VGE(th) VCE(sat) ICES Cies Qrr trr VF Peak reverse recovery current Reverse transfer capacitance QGate tr td(off) VCE=VGE 0 ±15 V nC V nA Tj=25°C 4 Tj=25°C K/W Thermal foil thickness=76um Kunze foil KU- ALF5 K/W Thermal foil thickness=76um Kunze foil KU- ALF5 3 Revision: 1 Copyright by Vincotech |
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