2SD1016 datasheet(2/2 Pages) ISC

No. de pieza	2SD1016

Descripción Electrónicos	Silicon NPN Power Transistor

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

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isc Silicon NPN Power Transistor

2SD1016

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 10mA ; IB= 0

800

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 4.5A; IB= 2.0A

1.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 4.5A; IB= 2.0A

1.3

V

ICBO

Collector Cutoff Current

VCB=1500V;IE=0

VCB=1500V;IE=0 ;TC=125℃

1.0

2.0

mA

IEBO

Emitter Cutoff Current

VEB= 5.0V ; IC= 0

0.1

mA

hFE1

DC Current Gain

IC= 0.1A ; VCE= 5V

6

30

hFE2

DC Current Gain

IC= 4A ; VCE= 5V

7

COB

Output Capacitance

IE=0;VCB= 10V; ftest= 0.1MHz

125

pF

fT

Current-Gain—Bandwidth Product

IC=0.5A;VCE=10V;ftest=1.0MHz

7

MHz

Pulsed: Pulse duration ≤300 us, duty cycle ≤1.5 %

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