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IRL3303 Datasheet(PDF) 1 Page - International Rectifier |
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IRL3303 Datasheet(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET IRL3303 PD - 9.1322B Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Logic-Level Gate Drive l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description VDSS = 30V RDS(on) = 0.026Ω ID = 38A S D G TO-220AB 8/25/97 Parameter Min. Typ. Max. Units RθJC Junction-to-Case –––– –––– 2.2 RθCS Case-to-Sink, Flat, Greased Surface –––– 0.50 –––– °C/W RθJA Junction-to-Ambient –––– –––– 62 Thermal Resistance Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 38 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 27 A IDM Pulsed Drain Current 140 PD @TC = 25°C Power Dissipation 68 W Linear Derating Factor 0.45 W/°C VGS Gate-to-Source Voltage ±16 V EAS Single Pulse Avalanche Energy 130 mJ IAR Avalanche Current 20 A EAR Repetitive Avalanche Energy 6.8 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) Absolute Maximum Ratings |
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