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LM3046 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
No. de pieza LM3046
Descripción Electrónicos  Transistor Array
Download  6 Pages
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Fabricante Electrónico  NSC [National Semiconductor (TI)]
Página de inicio  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM3046 Datasheet(HTML) 3 Page - National Semiconductor (TI)

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Electrical Characteristics (Continued)
(T
A = 25˚C unless otherwise specified)
Parameter
Conditions
Limits
Units
Min
Typ
Max
Temperature Coefficient of
Input Offset Voltage
V
CE = 3V, IC = 1 mA
1.1
µV/˚C
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 2: The collector of each transistor is isolated from the substrate by an integral diode. The substrate (terminal 13) must be connected to the most negative point
in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
Electrical Characteristics
Parameter
Conditions
Min
Typ
Max
Units
Low Frequency Noise Figure (NF)
f = 1 kHz, V
CE = 3V,
3.25
dB
I
C = 100 µA, RS = 1kΩ
LOW FREQUENCY, SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS
Forward Current Transfer Ratio (h
fe)f = 1 kHz, VCE = 3V,
110
I
C = 1mA
Short Circuit Input Impednace (h
ie)
3.5
k
Open Circuit Output Impedance (h
oe)
15.6
µmho
Open Circuit Reverse Voltage Transfer Ratio
(h
re)
1.8x10
−4
ADMITTANCE CHARACTERISTICS
Forward Transfer Admittance (Y
fe)f = 1 MHz, VCE = 3V,
31 − j 1.5
Input Admittance (Y
ie)IC = 1 mA
0.3+J 0.04
Output Admittance (Y
oe)
0.001+j 0.03
Reverse Transfer Admittance (Y
re)
See Curve
Gain Bandwidth Product (f
T)VCE = 3V, IC = 3 mA
300
550
Emitter to Base Capacitance (C
EB)VEB = 3V, IE = 0
0.6
pF
Collector to Base Capacitance (C
CB)VCB = 3V, IC = 0
0.58
pF
Collector to Substrate Capacitance (C
CI)VCS = 3V, IC = 0
2.8
pF
Typical Performance Characteristics
Typical Collector To Base
Cutoff Current vs Ambient
Temperature for Each
Transistor
DS007950-8
Typical Collector To Emitter
Cutoff Current vs Ambient
Temperature for Each
Transistor
DS007950-9
Typical Static Forward
Current-Transfer Ratio and
Beta Ratio for Transistors Q
1
and Q
2 vs Emitter Current
DS007950-10
www.national.com
3


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