2SD130 datasheet(1/2 Pages) ISC

No. de pieza	2SD130

Descripción Electrónicos	Silicon NPN Power Transistor

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc website：www.iscsemi.com

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1

isc Silicon NPN Power Transistor

2SD130

DESCRIPTION

·

DC Current Gain -hFE = 15(Min)@ IC= 3A

·

Collector-Emitter Breakdown Voltage-

: V(BR) CEO= 60V(Min)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use in general purpose amplifier and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

3.0

A

ICM

Collector Current-Peak

5.0

A

IB

Base Current

1.0

A

PC

Collector Power Dissipation@TC=25℃

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

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2SD130 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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